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H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/10 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/60 (2010.01); H01L 33/36 (2010.01); H01L 33/20 (2010.01); H01L 33/42 (2010.01);

U.S. Cl.

CPC ...

H01L 33/46 (2013.01); H01L 33/10 (2013.01); H01L 33/382 (2013.01); H01L 33/40 (2013.01); H01L 33/44 (2013.01); H01L 33/60 (2013.01); H01L 33/385 (2013.01); H01L 33/405 (2013.01); H01L 33/387 (2013.01); H01L 33/36 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0016 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/42 (2013.01);

Abstract

Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

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