The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Jul. 01, 2013
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventor:
Hyo Kun Son, Seoul, KR;
Assignee:
LG Innotek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 31/12 (2006.01); H01L 33/24 (2010.01); H01L 33/10 (2010.01); H01L 33/20 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/10 (2013.01); H01L 33/20 (2013.01); H01L 33/0079 (2013.01);
Abstract
Provided is a light emitting device, which includes a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer, and a intermediate refraction layer. The active layer is disposed on the second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed on the active layer. The intermediate refraction layer is disposed on the first conductive type semiconductor layer. The intermediate refraction layer has a refractivity that is smaller than that of the first conductive type semiconductor layer and is greater than that of air.