The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Dec. 19, 2012
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 29/66477 (2013.01); H01L 21/823814 (2013.01); H01L 29/7848 (2013.01); H01L 21/823807 (2013.01); H01L 21/823892 (2013.01);
Abstract
An integrated circuit containing an MOS transistor with epitaxial source and drain regions may be formed by implanting a retrograde anti-punch-through layer prior to etching the source drain regions for epitaxial replacement. The anti-punch-through layer is disposed between stressor tips of the epitaxial source and drain regions, and does not substantially extend into the epitaxial source and drain regions.