The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Aug. 04, 2014
AU Optronics Corp., Hsin-Chu, TW;
Peng-Bo Xi, Hsin-Chu, TW;
Yu-Chi Chen, Hsin-Chu, TW;
AU Optronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A thin-film transistor includes a gate electrode, a capacitance compensation structure, a semiconductor layer, a dielectric layer, a drain electrode and a source electrode. The capacitance compensation structure is disposed on the substrate and electrically connected to the gate electrode. The capacitance compensation structure has a first side facing the gate electrode and a second side facing away from the gate electrode. The semiconductor layer covers a portion of the gate electrode, and at least extends to overlap the first side of the capacitance compensation structure. The dielectric layer has a first opening and a second opening. Both of the first opening and the second opening expose a portion of the semiconductor layer overlapping the gate electrode respectively. The drain electrode is in contact with the semiconductor layer though the first opening. The source electrode is in contact with the semiconductor layer though the second opening.