The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Mar. 20, 2012
Chen-yuan Tu, New Taipei, TW;
Yih-chyun Kao, Changhua County, TW;
Shu-feng Wu, Miaoli County, TW;
Chun-nan Lin, Changhua County, TW;
Chen-Yuan Tu, New Taipei, TW;
Yih-Chyun Kao, Changhua County, TW;
Shu-Feng Wu, Miaoli County, TW;
Chun-Nan Lin, Changhua County, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate, a channel layer, a gate insulation layer, a source, a drain and a silicon-aluminum-oxide layer. The gate is disposed on a substrate. The channel layer is disposed on the substrate. The channel layer overlaps the gate. The gate insulation layer is disposed between the gate and the channel layer. The source and the drain are disposed on two sides of the channel layer. The silicon-aluminum-oxide layer is disposed on the substrate and covers the source, the drain and the channel layer.