The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Jan. 09, 2014
International Business Machines Corporation, Armonk, NY (US);
Karlsruher Institut Fuer Technologie, Karlsruhe, DE;
Phaedon Avouris, Yorktown Heights, NY (US);
Yu-ming Lin, Poughkeepsie, NY (US);
Mathias B. Steiner, Croton-on-Hudson, NY (US);
Michael W. Engel, Karlsruhe, DE;
Ralph Krupke, Stutensee, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Carbon nanotubes can be aligned with compatibility with semiconductor manufacturing processes, with scalability for forming smaller devices, and without performance degradation related to structural damages. A planar structure including a buried gate electrode and two embedded electrodes are formed. After forming a gate dielectric, carbon nanotubes are assembled in a solution on a surface of the gate dielectric along the direction of an alternating current (AC) electrical field generated by applying a voltage between the two embedded electrodes. A source contact electrode and a drain contact electrode are formed by depositing a conductive material on both ends of the carbon nanotubes. Each of the source and drain contact electrodes can be electrically shorted to an underlying embedded electrode to reduce parasitic capacitance.