The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
May. 28, 2010
Sandip Tiwari, Ithaca, NY (US);
Ravishankar Sundararaman, Ithaca, NY (US);
Sang Hyeon Lee, Ithaca, NY (US);
Moonkyung Kim, Ithaca, NY (US);
Sandip Tiwari, Ithaca, NY (US);
Ravishankar Sundararaman, Ithaca, NY (US);
Sang Hyeon Lee, Ithaca, NY (US);
Moonkyung Kim, Ithaca, NY (US);
Cornell University, Ithaca, NY (US);
Abstract
In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and wherein the method further includes imparting energy to the phase transition material region to induce a phase transition of the phase transition material region. By inducing a phase transition of the phase transition material region, a state of the semiconductor structure can be changed. There is further set forth an apparatus comprising a structure including an electrode and a phase transition material region, wherein the apparatus is operative for imparting energy to the phase transition material region to induce a phase transition of the phase transition material region without the phase transition of the phase transition material region being dependent on electron transport through the phase transition material region.