The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Jul. 05, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Takeshi Sonehara, Kawasaki, JP;
Nobuaki Yasutake, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a resistance change memory includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, a cell unit which is provided at the intersection of the first interconnect line and the second interconnect line and which includes a memory element and a non-ohmic element that are connected in series. The non-ohmic element has a first semiconductor layer which includes at least one diffusion buffering region and a conductive layer adjacent to the first semiconductor layer. The diffusion buffering region is different in crystal structure from a semiconductor region except for the diffusion buffering region in the first semiconductor layer.