The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Jan. 21, 2014
Applicants:
Chia-ling Kao, San Jose, CA (US);
Sean S. Kang, San Ramon, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Inventors:
Chia-Ling Kao, San Jose, CA (US);
Sean S. Kang, San Ramon, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/31116 (2013.01); H01L 21/321 (2013.01); H01L 21/32136 (2013.01);
Abstract
Methods of patterning low-k dielectric films are described. In an example, In an embodiment, a method of patterning a low-k dielectric film involves forming and patterning a metal nitride mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves passivating the metal nitride mask layer by treating with a plasma based on O/N/SiF. The method also involves etching a portion of the low-k dielectric layer.