The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Sep. 26, 2012
Applicants:
Joseph C. Boisvert, Thousand Oaks, CA (US);
Christopher M. Fetzer, Valencia, CA (US);
Inventors:
Joseph C. Boisvert, Thousand Oaks, CA (US);
Christopher M. Fetzer, Valencia, CA (US);
Assignee:
The Boeing Company, Chicago, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 31/0687 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0687 (2013.01); H01L 31/06875 (2013.01); Y02E 10/544 (2013.01);
Abstract
Methods for improving the performance and lifetime of irradiated photovoltaic cells are disclosed, whereby Group-V elements, and preferably nitrogen, are used to dope semiconductor GaAs-based subcell alloys.
Quick Actions:
Boisvert, Joseph. (2015). Group v doping of gaas-based layers to improve radiation tolerance of solar cells (U.S. Patent No. 8987129). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8987129
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile