The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Jun. 05, 2013
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Hiroyuki Okazaki, Tokyo, JP;
Takuma Nanjo, Tokyo, JP;
Yosuke Suzuki, Tokyo, JP;
Akifumi Imai, Tokyo, JP;
Muneyoshi Suita, Tokyo, JP;
Eiji Yagyu, Tokyo, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Abstract
The present invention relates to a method for manufacturing a heterojunction semiconductor device including an AlGaN layer, the method including the steps of (a) forming a dummy electrode in a region where a gate electrode is arranged on the AlGaN layer, (b) depositing a dielectric film on the AlGaN layer by exposing side surfaces of the dummy electrode, using a device having anisotropy, (c) forming an opening in the dielectric film by removing the dummy electrode, and (d) forming the gate electrode that extends from inside the opening onto the dielectric film in a vicinity of the opening.