The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Oct. 11, 2012
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Inventors:
Tomihito Miyazaki, Osaka, JP;
Toru Hiyoshi, Osaka, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-Shi, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66143 (2013.01); H01L 29/872 (2013.01); H01L 29/1608 (2013.01); Y10S 438/931 (2013.01);
Abstract
A silicon carbide substrate having a main face is prepared. By applying thermal oxidation to the main face of the silicon carbide substrate at a first temperature, an oxide film is formed on the main face. After the oxide film is formed, heat treatment is applied to the silicon carbide substrate at a second temperature higher than the first temperature. An opening exposing a portion of the main face is formed at the oxide film. A Schottky electrode is formed on the main face exposed by the opening.