The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Apr. 16, 2013
Applicant:
Samsung Display Co., Ltd., Yongin, KR;
Inventors:
Ji-Yong Park, Suwon-si, KR;
Jae-Bon Koo, Yongin-si, KR;
Hye-Hyang Park, Suwon-si, KR;
Ki-Yong Lee, Yongin-si, KR;
Ul-Ho Lee, Yongin-si, KR;
Assignee:
Samsung Display Co., Ltd., Yongin, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02675 (2013.01); H01L 27/1285 (2013.01); H01L 27/1296 (2013.01); H01L 29/04 (2013.01); H01L 29/78675 (2013.01); H01L 21/2026 (2013.01);
Abstract
The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.