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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8987120 B1

PDFFull Text
Date of Patent:
Mar. 24, 2015

Filed:

Apr. 16, 2013

Flat panel display device comprising polysilicon thin film transistor and method of manufacturing the same

Applicant:

Samsung Display Co., Ltd., Yongin, KR;

Inventors:

Ji-Yong Park, Suwon-si, KR;

Jae-Bon Koo, Yongin-si, KR;

Hye-Hyang Park, Suwon-si, KR;

Ki-Yong Lee, Yongin-si, KR;

Ul-Ho Lee, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin, KR;

Attorney:

H.C. Park & Associates, PLC

Primary Examiner:

Colleen A Matthews

Assistant Examiner:

Colleen E Snow

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02675 (2013.01); H01L 27/1285 (2013.01); H01L 27/1296 (2013.01); H01L 29/04 (2013.01); H01L 29/78675 (2013.01); H01L 21/2026 (2013.01);
Abstract

The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.

Find Patent Forward Citations

Park, Ji-Yong. (2015). Flat panel display device comprising polysilicon thin film transistor and method of manufacturing the same (U.S. Patent No. 8987120). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8987120

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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