logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8987111 B1

PDFFull Text
Expired
Date of Patent:
Mar. 24, 2015

Filed:

Mar. 08, 2013

Method of manufacturing a three dimensional array having buried word lines of different heights and widths

Applicants:

Jay-bok Choi, Hwaseong-si, KR;

Jiyoung Kim, Yongin-si, KR;

Hyun-woo Chung, Seoul, KR;

Sungkwan Choi, Hwaseong-si, KR;

Yoosang Hwang, Suwon-si, KR;

Inventors:

Jay-Bok Choi, Hwaseong-si, KR;

Jiyoung Kim, Yongin-si, KR;

Hyun-Woo Chung, Seoul, KR;

Sungkwan Choi, Hwaseong-si, KR;

Yoosang Hwang, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Charles Garber

Assistant Examiner:

Brigitte Paterson

Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 21/308 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/3086 (2013.01); H01L 27/10891 (2013.01);
Abstract

According to a method of fabricating a semiconductor device, a first mask pattern is used to etch first device isolation layers and active lines or form grooves, in which word lines will be provided. Thereafter, the active lines are etched in a self-alignment manner by using the first mask pattern as an etch mask. As a result, it is possible to suppress mask misalignment from occurring.

Find Patent Forward Citations

Choi, Jay-Bok. (2015). Method of manufacturing a three dimensional array having buried word lines of different heights and widths (U.S. Patent No. 8987111). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8987111

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…