The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Mar. 08, 2013
Applicants:
Jay-bok Choi, Hwaseong-si, KR;
Jiyoung Kim, Yongin-si, KR;
Hyun-woo Chung, Seoul, KR;
Sungkwan Choi, Hwaseong-si, KR;
Yoosang Hwang, Suwon-si, KR;
Inventors:
Jay-Bok Choi, Hwaseong-si, KR;
Jiyoung Kim, Yongin-si, KR;
Hyun-Woo Chung, Seoul, KR;
Sungkwan Choi, Hwaseong-si, KR;
Yoosang Hwang, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 21/308 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/3086 (2013.01); H01L 27/10891 (2013.01);
Abstract
According to a method of fabricating a semiconductor device, a first mask pattern is used to etch first device isolation layers and active lines or form grooves, in which word lines will be provided. Thereafter, the active lines are etched in a self-alignment manner by using the first mask pattern as an etch mask. As a result, it is possible to suppress mask misalignment from occurring.