Amorphous multicomponent dielectric based on the mixture of high band gap and high k materials, respective devices and manufacture

Abstract

High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as TaOwith SiOor AlOor HfOwith SiOor AlOare used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture TaO:SiO, exhibiting field-effect mobility exceeding 35 cmVs, close to 0 V turn-on voltage, on/off ratio higher than 10and subthreshold slope below 0.24 V dec.