The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
May. 15, 2012
Bruce G. Elmegreen, Yorktown Heights, NY (US);
Lia Krusin-elbaum, Yorktown Heights, NY (US);
Dennis M. Newns, Yorktown Heights, NY (US);
Robert L. Sandstrom, Yorktown Heights, NY (US);
Bruce G. Elmegreen, Yorktown Heights, NY (US);
Lia Krusin-Elbaum, Yorktown Heights, NY (US);
Dennis M. Newns, Yorktown Heights, NY (US);
Robert L. Sandstrom, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.