The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Jan. 14, 2013
Applicant:
Dongbu Hitek Co., Ltd., Seoul, KR;
Inventors:
Jong Taek Hwang, Seoul, KR;
Han Choon Lee, Seoul, KR;
Assignee:
Dongbu Hitek Co., Ltd., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14683 (2013.01); H01L 27/1464 (2013.01); H01L 27/14634 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/14687 (2013.01);
Abstract
A method of manufacturing a backside illumination image sensor includes forming an epitaxial layer on a silicon (Si) substrate, and forming an inter-metal dielectric (IMD) on the epitaxial layer. The method includes forming a trench in one side region of the epitaxial layer, forming an insulating layer at a side wall and bottom of the trench, forming a color filter and microlens on the IMD, bonding a support wafer onto the IMD with the color filter and microlens formed therein, and/or removing the Si substrate.