The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Nov. 05, 2013
Applicant:

Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;

Inventors:

Chia-Hung Huang, Hsinchu, TW;

Shih-Cheng Huang, Hsinchu, TW;

Po-Min Tu, Hsinchu, TW;

Ya-Wen Lin, Hsinchu, TW;

Shun-Kuei Yang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/205 (2006.01); H01L 21/302 (2006.01); H01L 21/329 (2006.01); H01L 33/58 (2010.01); H01L 33/10 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 33/10 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01);
Abstract

A manufacturing method for an LED (light emitting diode) includes following steps: providing a substrate; disposing a transitional layer on the substrate, the transitional layer comprising a planar area with a flat top surface and a patterned area with a rugged top surface; coating an aluminum layer on the transitional layer; using a nitriding process on the aluminum layer to form an AlN material on the transitional layer; disposing an epitaxial layer on the transitional layer and covering the AlN material, the epitaxial layer contacting the planar area and the patterned area of the transitional layer, a plurality of gaps being defined between the epitaxial layer and the slugs of the second part of the AlN material in the patterned area of the transitional layer.


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