The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Aug. 18, 2010
Klaus Köhler, Freiburg, DE;
Stefan Müller, Freiburg, DE;
Patrick Waltereit, Freiburg, DE;
Abstract
A method for determining the structure of a transistor having at least one first layer including GaN, one second layer including AlGaN disposed on the first layer, and one fourth layer including a metal or an alloy disposed on the second layer. The method includes setting the layer thickness of the second layer, setting the aluminum content x of the second layer, producing at least the second layer and the first layer, determining the surface potential of formula (I) and/or the charge carrier density n, and/or the charge carrier motility μ after producing the second layer and the first layer, and selecting the material of the fourth layer as a function of the at least one measurement result.