The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Apr. 05, 2011
Isaac Harshman Wildeson, West Lafayette, IN (US);
Timothy David Sands, West Lafayette, IN (US);
Isaac Harshman Wildeson, West Lafayette, IN (US);
Timothy David Sands, West Lafayette, IN (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiNon the GaN film, etching a growth opening through the SiNand into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiNlayer can be removed after the growing step. A SiOtemplate can be formed on the GaN film and the GaN can be grown to cover the SiOtemplate before depositing SiNon the GaN film. The SiOtemplate can be removed after growing the nanorods.