The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Jun. 25, 2010
Applicants:

Daniel James Twitchen, Berkshire, GB;

Sarah Louise Geoghegan, Berkshire, GB;

Neil Perkins, Berkshire, GB;

Rizwan Uddin Ahmad Khan, Berkshire, GB;

Inventors:

Daniel James Twitchen, Berkshire, GB;

Sarah Louise Geoghegan, Berkshire, GB;

Neil Perkins, Berkshire, GB;

Rizwan Uddin Ahmad Khan, Berkshire, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 3/06 (2006.01); C30B 29/02 (2006.01); C30B 29/04 (2006.01); C23C 16/27 (2006.01); C23C 16/56 (2006.01); C30B 25/10 (2006.01); C30B 31/20 (2006.01); A44C 17/00 (2006.01);
U.S. Cl.
CPC ...
C23C 16/278 (2013.01); C23C 16/27 (2013.01); C23C 16/56 (2013.01); C30B 25/105 (2013.01); C30B 29/04 (2013.01); C30B 31/20 (2013.01); A44C 17/008 (2013.01);
Abstract

A method of introducing NV centers in single crystal CVD diamond material is described. One step of the method comprises irradiating diamond material that contains single substitutional nitrogen to introduce isolated vacancies into the diamond material in a concentration of at least 0.05 ppm and at most 1 ppm. Another step of the method comprises annealing the irradiated diamond to form NV centers from at least some of the single substitutional nitrogen defects and the introduced isolated vacancies.


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