The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Mar. 12, 2012
Applicant:
Yukimune Watanabe, Hokuto, JP;
Inventor:
Yukimune Watanabe, Hokuto, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); C30B 29/36 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); H01L 21/02381 (2013.01); H01L 21/0262 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); C30B 25/04 (2013.01); C30B 25/183 (2013.01); C30B 29/36 (2013.01);
Abstract
A semiconductor substrate includes: single crystal silicon; a mask material formed on a surface of the single crystal silicon and having an opening; a silicon carbide film formed on a portion exposed in the opening of the single crystal silicon; and a single crystal silicon carbide film formed so as to cover the silicon carbide film and the mask material. The mask material has a viscosity of 10Pa·S or more and 10Pa·S or less in a temperature range of 950 to 1400° C.