The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8986451 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 24, 2015

Filed:

May. 25, 2010
Applicant:

Piero Sferlazzo, Marblehead, MA (US);

Inventor:

Piero Sferlazzo, Marblehead, MA (US);

Assignee:

Singulus MOCVD GmbH I. GR., Kahl am Main, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/458 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4584 (2013.01); C23C 16/45565 (2013.01); C23C 16/45578 (2013.01); C23C 16/52 (2013.01); H01L 21/67109 (2013.01); H01L 21/67784 (2013.01); H01L 21/68771 (2013.01);
Abstract

Described is a linear batch CVD system that includes a deposition chamber, one or more substrate carriers, gas injectors and a heating system. Each substrate carrier is disposed in the deposition chamber and has at least one receptacle configured to receive a substrate. The substrate carriers are configured to hold substrates in a linear configuration. Each gas injector includes a port configured to supply a gas in a uniform distribution across one or more of the substrates. The heating system includes at least one heating element and a heating control module for uniformly controlling a temperature of the substrates. The system is suitable for high volume CVD processing of substrates. The narrow width of the deposition chamber enables a uniform distribution of precursor gases across the substrates along the length of the reaction chamber and permits a greater number of substrates to be processed in comparison to conventional deposition chambers.


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