The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Jun. 10, 2013
Applicant:
Corporation for National Research Initiatives, Reston, VA (US);
Inventors:
Assignee:
Corporation for National Reseach Initiatives, Reston, VA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/18 (2006.01); H04B 1/40 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H03H 9/02 (2006.01); H03H 9/60 (2006.01); H01L 23/538 (2006.01); H03H 3/02 (2006.01); H03H 9/70 (2006.01);
U.S. Cl.
CPC ...
H04B 1/40 (2013.01); H01L 25/50 (2013.01); H01L 24/24 (2013.01); H03H 9/02228 (2013.01); H03H 9/605 (2013.01); H01L 2224/24137 (2013.01); H01L 2924/13064 (2013.01); H01L 23/5389 (2013.01); H03H 3/02 (2013.01); H03H 9/70 (2013.01);
Abstract
A communication system front-end architecture and a method of fabricating same are disclosed in which a diverse set of semiconductor technologies and device types (including CMOS, SiGe CMOS, InP HBTs (heterojunction bipolar transistors), InP HEMTs (high electron mobility transistors), GaN HEMTs, SiC devices, any number from a diverse set of MEMS sensors and actuators, and potentially photonics) is merged onto a single silicon, or other material substrate to thereby enable the development of smaller, lighter, and higher performance systems.