The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Feb. 07, 2013
Avago Technologies General Ip (Singapore) Pte. Ltd., Singapore, SG;
Ruiyu Fang, Turin, IT;
Giammarco Rossi, Turin, IT;
Alessandro Stano, Turin, IT;
Giuliana Morello, Turin, IT;
Paola-Ida Gotta, Turin, IT;
Roberto Paoletti, Turin, IT;
Pietro Della Casa, Mantova, IT;
Giancarlo Meneghini, Turin, IT;
Avago Technologies General IP (Singapore) Pte. Ltd., Singapore, SG;
Abstract
An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.