The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Jul. 28, 2011
Takuji Onuma, Kanagawa, JP;
Kenichi Hidaka, Kanagawa, JP;
Hiromichi Takaoka, Kanagawa, JP;
Yoshitaka Kubota, Kanagawa, JP;
Hiroshi Tsuda, Kanagawa, JP;
Takuji Onuma, Kanagawa, JP;
Kenichi Hidaka, Kanagawa, JP;
Hiromichi Takaoka, Kanagawa, JP;
Yoshitaka Kubota, Kanagawa, JP;
Hiroshi Tsuda, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
An antifuse comprised of an NMOS transistor or an NMOS capacitor includes a first terminal coupled to a gate electrode, a second terminal coupled to a diffusion layer, and a gate insulating film interposed between the gate electrode and the diffusion layer. A programming circuit includes a first programming circuit which has first current drive capability and which performs first programming operation and a second programming circuit which has second current drive capability larger than the first current drive capability and which performs second programming operation to follow the first programming operation. In the first programming operation, the first programming circuit breaks down the gate insulating film by applying a first programming voltage between the first terminal and the second terminal. In the second programming operation, the second programming circuit applies a second programming voltage lower than the first programming voltage between the first terminal and the second terminal.