The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Oct. 14, 2013
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Seung Hwan Baik, Gyeonggi-do, KR;

Gyu Seog Cho, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/30 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/24 (2013.01); G11C 16/10 (2013.01); G11C 16/3481 (2013.01); G11C 16/3454 (2013.01); G11C 16/0483 (2013.01); G11C 16/30 (2013.01);
Abstract

A semiconductor memory device and a method of operating the same perform a program loop, including a program operation and a program verification operation based on a sub-verification voltage smaller than a target verification voltage and the target verification voltage, to the memory cells until a threshold voltage of the memory cells is greater than the target verification voltage. A positive voltage, supplied to the bit line of the memory cell of which the threshold voltage is higher than the sub-verification voltage, is increased whenever the program operation is performed, and thus a threshold voltage distribution of the memory cells may be improved.


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