The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Sep. 04, 2009
Applicants:

Jianhua Yang, Palo Alto, CA (US);

John Paul Strachan, Stanford, CA (US);

Julien Borghetti, Mountain View, CA (US);

Matthew D. Pickett, San Francisco, CA (US);

Inventors:

Jianhua Yang, Palo Alto, CA (US);

John Paul Strachan, Stanford, CA (US);

Julien Borghetti, Mountain View, CA (US);

Matthew D. Pickett, San Francisco, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/02 (2006.01); H01L 45/00 (2006.01); H01L 27/102 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1021 (2013.01); G11C 13/0007 (2013.01); G11C 2213/12 (2013.01); G11C 2213/32 (2013.01); G11C 2213/34 (2013.01); G11C 2213/72 (2013.01); H01L 27/24 (2013.01); H01L 29/8615 (2013.01); H01L 29/872 (2013.01);
Abstract

A switchable junction () having an intrinsic diode () formed with a voltage dependent resistor () is disclosed. The switchable junction comprises a first electrode (), a second electrode (), and a memristive matrix () configured to form an electrical interface () with the first electrode (). The electrical interface has a programmable conductance. The voltage dependent resistor () is in electrical contact with the memristive matrix (). The voltage dependent resistor is configured to form a rectifying diode interface () with the second electrode ().


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