The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

May. 07, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kazutoshi Nakamura, Kanagawa-ken, JP;

Toru Takayama, Tokyo, JP;

Yuki Kamata, Kanagawa-ken, JP;

Akio Nakagawa, Kanagawa-ken, JP;

Yoshinobu Sano, Tokyo, JP;

Toshiyuki Naka, Kanagawa-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/04 (2006.01); H03K 5/00 (2006.01); G06F 1/08 (2006.01); H03L 7/099 (2006.01); H02J 1/00 (2006.01);
U.S. Cl.
CPC ...
H03K 5/00006 (2013.01); G06F 1/08 (2013.01); H03L 7/0996 (2013.01); H02J 1/00 (2013.01); H03K 2005/00293 (2013.01);
Abstract

A semiconductor device includes: a voltage-control-type clock generation circuit having a plurality of stages of first delay elements and whose oscillation frequency is controlled according to a control voltage applied to the first delay elements; a delay circuit having a plurality of stages of second delay elements connected serially; and a selection circuit selecting one from pulse signals output by the plurality of stages of respective second delay elements. The first delay elements and the second delay elements have a same structure formed on a same semiconductor substrate, and a delay amount of the second delay elements is adjusted according to the control voltage.


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