The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Mar. 16, 2012
Robert Beach, Los Gatos, CA (US);
Guenole Jan, San Jose, CA (US);
Yu-jen Wang, San Jose, CA (US);
Witold Kula, Sunnyvale, CA (US);
Po-kang Wang, Los Altos, CA (US);
Robert Beach, Los Gatos, CA (US);
Guenole Jan, San Jose, CA (US);
Yu-Jen Wang, San Jose, CA (US);
Witold Kula, Sunnyvale, CA (US);
Po-Kang Wang, Los Altos, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.