The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Sep. 13, 2012
Applicant:
Noriyuki Miura, Miyagi, JP;
Inventor:
Noriyuki Miura, Miyagi, JP;
Assignee:
LAPIS Semiconductor Co., Ltd., Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78615 (2013.01); H01L 29/78624 (2013.01); H01L 29/0692 (2013.01);
Abstract
A semiconductor device formed on a silicon-on-insulator substrate includes a gate electrode, a gate insulation film, a drain diffusion region, a drift region, a body region, a plurality of source diffusion regions, and a plurality of charge collection diffusion regions. The source diffusion regions and charge collection diffusion regions are of mutually opposite conductivity types, and alternate with one another in the direction paralleling the width of the gate electrode. The half-width of each source diffusion region is equal to or less than the length of the gate electrode plus the half-length of the drift region.