The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Mar. 02, 2012
Applicants:

Ryo Wada, Kanagawa-ken, JP;

Kaori Yoshioka, Kanagawa-ken, JP;

Norio Yasuhara, Kanagawa-ken, JP;

Tomoko Matsudai, Tokyo, JP;

Yuichi Goto, Kanagawa-ken, JP;

Inventors:

Ryo Wada, Kanagawa-ken, JP;

Kaori Yoshioka, Kanagawa-ken, JP;

Norio Yasuhara, Kanagawa-ken, JP;

Tomoko Matsudai, Tokyo, JP;

Yuichi Goto, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/761 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/761 (2013.01); H01L 29/7394 (2013.01); H01L 29/7824 (2013.01); H01L 29/66128 (2013.01); H01L 29/8611 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); Y10S 257/91 (2013.01);
Abstract

According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first conductivity type having a second thickness is provided on the insulating film. An impurity diffusion layer of a second conductivity type is provided partially in a lower portion of the semiconductor layer and is in contact with the insulating film.


Find Patent Forward Citations

Loading…