The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Sep. 04, 2013
Applicant:
Kabushiki Kaisha Toshiba, Minato-Ku, JP;
Inventors:
Kenichi Fujii, Yokkaichi, JP;
Tooru Hara, Yokkaichi, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/336 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 29/66833 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01);
Abstract
A semiconductor storage device according to the present embodiment includes a semiconductor substrate. Each of memory cell arrays includes a plurality of memory cells on the semiconductor substrate. Select gate transistors are provided on ends of the memory cell arrays and brought into conduction when the memory cells are connected to a corresponding line. An embedded impurity layer is embedded in active areas between the select gate transistors respectively corresponding to the memory cell arrays adjacent to each other. Contact plugs connect the embedded impurity layer and the lines.