The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Nov. 22, 2011
Applicants:
Kevin J. Torek, Meridian, ID (US);
Mark Fischer, Boise, ID (US);
Robert J. Hanson, Boise, ID (US);
Inventors:
Assignee:
Round Rock Research, LLC, Parsippany, NJ (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 29/66795 (2013.01); H01L 27/10808 (2013.01); H01L 27/10826 (2013.01); H01L 27/10879 (2013.01); H01L 29/7853 (2013.01); H01L 29/7854 (2013.01);
Abstract
Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.