The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Dec. 11, 2012
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Francois Pagette, Jefferson Valley, NY (US);
Kathryn T. Schonenberg, Wappingers Falls, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/737 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66242 (2013.01); H01L 29/1004 (2013.01); H01L 29/7371 (2013.01); H01L 29/0817 (2013.01);
Abstract
Embodiments of the present invention provide a bipolar transistor with low resistance base contact and method of manufacturing the same. The bipolar transistor includes an emitter, a collector, and an intrinsic base between the emitter and the collector. The intrinsic base extends laterally to an extrinsic base. The extrinsic base further includes a first semiconductor material with a first bandgap and a second semiconductor material with a second bandgap that is smaller than the first bandgap.