Semiconductor device including gan-based compound semiconductor stacked layer and method for producing the same

Abstract

There are provided a semiconductor device in which a drain leak current can be reduced in the transistor operation while high vertical breakdown voltage is achieved and a method for producing the semiconductor device. In the semiconductor device, an openingthat extends from an n-type contact layerand reaches an n-type drift layerthrough a p-type barrier layeris formed. The semiconductor device includes a regrown layerlocated so as to cover portions of the p-type barrier layerand the like that are exposed to the opening, the regrown layerincluding an undoped GaN channel layerand a carrier supply layer; an insulating layerlocated so as to cover the regrown layer; and a gate electrode G located on the insulating layer. In the p-type barrier layer, the Mg concentration A (cm)and the hydrogen concentration B (cm) satisfy 0.1<B/A<0.9 . . . (1).