The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Jul. 09, 2013
Samsung Electro-mechanics Co., Ltd., Suwon, KR;
Dong Soo Seo, Suwon, KR;
Jaehoon Park, Suwon, KR;
Kee Ju Um, Suwon, KR;
Chang Su Jang, Suwon, KR;
In Hyuk Song, Suwon, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon, KR;
Abstract
There is provided a power semiconductor device, including a plurality of trench gates formed to be spaced apart from each other by a predetermined distance, a current increasing part formed between the trench gates and including a first conductivity-type emitter layer and a gate oxide formed on a surface of the trench gate, and an immunity improving part formed between the trench gates and including a second conductivity-type body layer, a preventing film formed on the surface of the trench gate, and a gate oxide having a thickness less than that the gate oxide of the current increasing part.