The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
May. 18, 2006
Applicants:
Takeshi Kususe, Anan, JP;
Yoshiyuki Aihara, Anan, JP;
Daisuke Sanga, Anan, JP;
Kouichiroh Deguchi, Anan, JP;
Inventors:
Takeshi Kususe, Anan, JP;
Yoshiyuki Aihara, Anan, JP;
Daisuke Sanga, Anan, JP;
Kouichiroh Deguchi, Anan, JP;
Assignee:
Nichia Corporation, Anan-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/40 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 33/40 (2013.01); H01L 33/32 (2013.01);
Abstract
A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.