The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Feb. 19, 2013
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Jin Hyun Lee, Gyeonggi-do, KR;

Bum Joon Kim, Seoul, KR;

Seung Wan Chae, Gyeonggi-do, KR;

Chan Mook Lim, Gyeonggi-do, KR;

Jong Ho Lee, Gyeonggi-do, KR;

Jin Hwan Kim, Gyeonggi-do, KR;

Su Hyun Jo, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/207 (2006.01); H01L 33/08 (2010.01); H01L 27/15 (2006.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); F21V 29/00 (2006.01); F21V 3/00 (2006.01); F21K 99/00 (2010.01); F21V 15/01 (2006.01); F21Y 101/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 27/156 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 2224/48091 (2013.01); F21V 29/2206 (2013.01); F21V 3/00 (2013.01); F21K 9/1355 (2013.01); F21V 15/011 (2013.01); F21Y 2101/02 (2013.01);
Abstract

A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.


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