The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Feb. 28, 2013
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Tetsuhiro Tanaka, Isehara, JP;

Erika Takahashi, Chigasaki, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/786 (2013.01); H01L 29/7869 (2013.01);
Abstract

A semiconductor device which has stable electrical characteristics and high reliability is provided. The semiconductor device includes a gate electrode over an insulating surface, a gate insulating film over the gate electrode, a semiconductor film which is over the gate insulating film and overlaps with the gate electrode, and a protective insulating film over the semiconductor film; and the protective insulating film includes a crystalline insulating film and an aluminum oxide film over the crystalline insulating film.


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