The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Oct. 10, 2012
Panasonic Corporation, Osaka, JP;
Abstract
Provided is a nonvolatile semiconductor memory device including a variable resistance element in which a parasitic resistance between the lower electrode and the variable resistance layer included in the variable resistance element is reduced. The nonvolatile semiconductor memory device includes: a substrate; and a variable resistance elementformed on the substrate, wherein the variable resistance elementincludes a lower electrode layer formed on the substrate, a variable resistance layer formed on the lower electrode layer, and an upper electrode layer formed on the variable resistance layer, the lower electrode layer includes at least a first conductive layer and a second conductive layer which is formed on the first conductive layer and is in contact with the variable resistance layer, and the first conductive layer includes an oxidatively degraded layer which is formed on an upper surface of the first conductive layer due to oxidization of the first conductive layer.