The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Jan. 05, 2012
Applicants:

Gopal G. Pethuraja, Albany, NY (US);

Roger E. Welser, Providence, RI (US);

Ashok K. Sood, Brookline, MA (US);

Inventors:

Gopal G. Pethuraja, Albany, NY (US);

Roger E. Welser, Providence, RI (US);

Ashok K. Sood, Brookline, MA (US);

Assignee:

Magnolia Solar, Inc., Woburn, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0749 (2012.01); H01L 31/0352 (2006.01); H01L 31/032 (2006.01); H01L 31/072 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0749 (2013.01); H01L 31/032 (2013.01); H01L 31/035218 (2013.01); Y02E 10/541 (2013.01); H01L 31/0322 (2013.01); H01L 31/072 (2013.01);
Abstract

A photovoltaic (PV) device having a quantum dot sensitized interface includes a first conductor layer and a second conductor layer. At least one of the conductor layers is transparent to solar radiation. A quantum dot (nanoparticle) sensitized photo-harvesting interface comprises a photo-absorber layer, a quantum dot layer and a buffer layer, placed between the two conductors. The absorber layer is a p-type material and the buffer layer is an n-type material. The quantum dot layer has a tunable bandgap to cover infrared (IR), visible light and ultraviolet (UV) bands of solar spectrum.


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