The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Dec. 27, 2012
Applicants:

Kazunori Iida, Mie-Ken, JP;

Yuji Kobayashi, Mie-ken, JP;

Inventors:

Kazunori Iida, Mie-Ken, JP;

Yuji Kobayashi, Mie-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3083 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/32139 (2013.01); H01L 27/11519 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01);
Abstract

According to one embodiment, a method for manufacturing a semiconductor device includes forming a film having different filling properties dependent on space width above the patterning film to cover the first line patterns and the second line patterns to form the film on the first line patterns and on the first inter-line pattern space while making a cavity in the first inter-line pattern space and to form the film on at least a bottom portion of the second inter-line pattern space and a side wall of each of the second line patterns. The method includes performing etch-back of the film to remove the film on the first line patterns and on the first inter-line pattern space while causing the film to remain on at least the side wall of the second line patterns.


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