The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Aug. 25, 2014
Applicant:
YE Xin Technology Consulting Co., Ltd., Hsinchu, TW;
Inventors:
I-Wei Wu, Hsinchu, TW;
I-Min Lu, Hsinchu, TW;
Wei-Chih Chang, Hsinchu, TW;
Hui-Chu Lin, Hsinchu, TW;
Yi-Chun Kao, Hsinchu, TW;
Kuo-Lung Fang, Hsinchu, TW;
Assignee:
Ye Xin Technology Consulting Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 29/66765 (2013.01); H01L 21/3081 (2013.01); H01L 21/3065 (2013.01);
Abstract
A manufacturing method of a thin film transistor includes hard-baking and etching processes for a stop layer. Two through holes are exposed and developed in a photoresistor layer, in which a distance between the two through holes is substantially equal to the channel length of the thin film transistor. Further, the etching stop layer is dry-etched to obtain the thin film transistor having an expected channel length.