The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Aug. 21, 2012
Applicants:

Mitsunaga Saito, Inzai, JP;

Masahiro Hosoya, Okegawa, JP;

Inventors:

Mitsunaga Saito, Inzai, JP;

Masahiro Hosoya, Okegawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); B82Y 10/00 (2011.01); H01L 51/00 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1864 (2013.01); B82Y 10/00 (2013.01); H01L 51/0026 (2013.01); H01L 51/0027 (2013.01); H01L 51/0047 (2013.01); H01L 51/424 (2013.01); Y02E 10/549 (2013.01); H01L 31/022425 (2013.01); H01L 31/03529 (2013.01);
Abstract

According to one embodiment, there is provided a method for manufacturing a photovoltaic cell. The method includes forming a structure including a pair of electrodes which are arranged apart from each other, and a hetero-junction type photoelectric conversion layer interposed between the electrodes and containing a p-type semiconductor and a n-type semiconductor, and annealing the photoelectric conversion layer thermally while applying an AC voltage having a frequency of 0.01 kHz or more and less than 1 kHz to control a mixed state of the p-type semiconductor and n-type semiconductor in the photoelectric conversion layer.


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