The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Feb. 08, 2012
Satoshi Hongo, Oita, JP;
Kazumasa Tanida, Oita, JP;
Akihiro Hori, Oita, JP;
Kenji Takahashi, Ibaraki, JP;
Hideo Numata, Oita, JP;
Satoshi Hongo, Oita, JP;
Kazumasa Tanida, Oita, JP;
Akihiro Hori, Oita, JP;
Kenji Takahashi, Ibaraki, JP;
Hideo Numata, Oita, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.