The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Aug. 26, 2013
The Hong Kong Polytechnic University, Hong Kong, HK;
The Hong Kong Polytechnic University, Hunghom, Kowloon, HK;
Abstract
The presently claimed invention provides a barium strontium titanate/strontium titanate/gallium arsenide (BST/STO/GaAs) heterostructure comprising a gallium arsenide (GaAs) substrate, at least one strontium titanate (STO) layer, and at least one barium strontium titanate (BST) layer. The BST/STO/GaAs heterostructure of the present invention has a good temperature stability, high dielectric constant and low dielectric loss, which enable to fabricate tunable ferroelectric devices. A method for fabricating the BST/STO/GaAs heterostructure is also disclosed in the present invention, which comprises formation of at least one STO layer on the GaAs substrate by a first laser molecular beam epitaxial system, and formation of at least one BST layer on the STO layer by a second laser molecular beam epitaxial system.