The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Jul. 06, 2006
Applicants:

Robert T. Leonard, Raleigh, NC (US);

Mark Brady, Carrboro, NC (US);

Adrian Powell, Cary, NC (US);

Inventors:

Robert T. Leonard, Raleigh, NC (US);

Mark Brady, Carrboro, NC (US);

Adrian Powell, Cary, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C01B 31/36 (2006.01); B32B 9/00 (2006.01); B32B 19/00 (2006.01); C30B 29/36 (2006.01); C30B 23/00 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 23/00 (2013.01);
Abstract

A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.


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