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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8980066 B1

PDFFull Text
Date of Patent:
Mar. 17, 2015

Filed:

Mar. 14, 2008

Thin film metal oxynitride semiconductors

Applicant:

Yan YE, Saratoga, CA (US);

Inventor:

Yan Ye, Saratoga, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Rodney McDonald

Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); H01J 37/34 (2006.01); H01L 21/02 (2006.01); H01L 29/26 (2006.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0063 (2013.01); C23C 14/0676 (2013.01); H01J 37/3408 (2013.01); H01J 37/3429 (2013.01); H01L 21/02521 (2013.01); H01L 21/0254 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02573 (2013.01); H01L 21/02631 (2013.01); H01L 29/26 (2013.01); H01L 31/18 (2013.01); H01L 31/20 (2013.01); H01L 29/7869 (2013.01); Y02E 10/50 (2013.01);
Abstract

The present invention generally relates to a semiconductor film and a method of depositing the semiconductor film. The semiconductor film comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin. Additionally, the semiconductor film may be doped. The semiconductor film may be deposited by applying an electrical bias to a sputtering target comprising the one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin, and introducing a nitrogen containing gas and an oxygen containing gas. The sputtering target may optionally be doped. The semiconductor film has a mobility greater than amorphous silicon. After annealing, the semiconductor film has a mobility greater than polysilicon.

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