The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2015

Filed:

Mar. 12, 2014
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Alvaro Gomez-Iglesias, Regensburg, DE;

Guenther Groenninger, Seubersdorf, DE;

Christian Lauer, Regensburg, DE;

Harald Koenig, Bernhardswald, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/098 (2006.01); H01S 5/00 (2006.01); H01S 5/20 (2006.01); B82Y 20/00 (2011.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/20 (2013.01); B82Y 20/00 (2013.01); H01S 5/2031 (2013.01); H01S 5/34313 (2013.01); H01S 2301/16 (2013.01); H01S 2301/166 (2013.01);
Abstract

An edge emitting semiconductor laser comprising an active, radiation-generating zone (), and an common waveguide (), which is suitable for guiding the radiation generated in the active zone () within the semiconductor laser. The common waveguide () comprises a first n-doped layer () and a second n-doped layer (), which is arranged between the first n-doped layer () and the active zone (), wherein the refractive index nof the second n-doped layer () is greater than the refractive index nof the first n-doped layer () by a value dn.


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